Thursday, March 28, 2013

1303.6666 (Zachary Prieskorn et al.)

Characterization of Si Hybrid CMOS Detectors for use in the Soft X-ray Band    [PDF]

Zachary Prieskorn, Christopher V. Griffith, Stephen D. Bongiorno, Abraham D. Falcone, David N. Burrows
We report on the characterization of four Teledyne Imaging Systems HAWAII Hybrid Si CMOS detectors designed for X-ray detection. Three H1RG detectors were studied along with a specially configured H2RG. Read noise measurements were performed, with the lowest result being 7.1 e- RMS. Interpixel capacitive crosstalk (IPC) was measured for the three H1RGs and for the H2RG. The H1RGs had IPC upper limits of 4.0 - 5.5 % (up & down pixels) and 8.7 - 9.7 % (left & right pixels), indicating a clear asymmetry. Energy resolution is reported for two X-ray lines, 1.5 & 5.9 keV, at multiple temperatures between 150 - 210 K. The best resolution measured at 5.9 keV was 250 eV (4.2 %) at 150 K, with IPC contributing significantly to this measured energy distribution. The H2RG, with a unique configuration designed to decrease the capacitive coupling between ROIC pixels, had an IPC of 1.8 +/- 1.0 % indicating a dramatic improvement in IPC with no measurable asymmetry. We also measured dark current as a function of temperature for each detector. For the detector with the lowest dark current, at 150 K, we measured a dark current of 0.020 +/- 0.001 (e- sec-1 pix-1). There is also a consistent break in the fit to the dark current data for each detector. Above 180 K, all the data can be fit by the product of a power law in temperature and an exponential. Below 180 K the dark current decreases more slowly; a shallow power law or constant must be added to each fit, indicating a different form of dark current is dominant in this temperature regime. Dark current figures of merit at 293 K are estimated from the fit for each detector.
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