Giuseppe Cataldo, James A. Beall, Hsiao-Mei Cho, Brendan McAndrew, Michael D. Niemack, Edward J. Wollack
Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.
View original:
http://arxiv.org/abs/1209.2987
No comments:
Post a Comment